PART |
Description |
Maker |
MC-4532CC727XFA-A75 MC-4532CC727XFA |
32M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE 32M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
|
ELPIDA MEMORY INC Elpida Memory, Inc.
|
MC-4532CD646XF-A10 MC-4532CD646XF-A80 MC-4532CD646 |
32M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 SOCKET TYPE, DIMM-168 32M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
|
Elpida Memory, Inc.
|
K4M511633C-RBF1H K4M511633C-RBF75 K4M511633C-RBL K |
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8M X 16BIT X 4 BANKS MOBILE SDRAM IN 54FBGA
|
Samsung semiconductor
|
HYB39S64160AT HYB39S64160BT HYB39S64160BT-7 |
64M SDRAM Component 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M4× 1M× 16)同步动态RAM(用于高速图形场合)) 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M4M x 16)同步动态RAM(用于高速图形场合))
|
Infineon SIEMENS AG
|
IBM11M32735C |
32M x 72 DRAM Module(32M x 72动态RAM模块) 32M × 72配置内存2M × 72配置动态内存模块)
|
International Business Machines, Corp.
|
K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K4S280432B-TC_L75 K4S280432B-TC_L80 K4S280432B K4S |
32M X 4 SYNCHRONOUS DRAM, 7 ns, PDSO54 128MBIT SDRAM 8M X 4BIT X 4 BANKS SYNCHRONOUS DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
|
HYB39S256800T-8B HYB39S256400T-8B HYB39S256800T-10 |
256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54 256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Siemens Semiconductor Group SIEMENS AG
|
M5M4V16G50DFP-12 M5M4V16G50DFP-10 |
16M (2-BANK x 262144-WORD x 32-BIT) Synchronous Graphics RAM
|
Mitsubishi Electric Corporation
|
EM63B165TS-5SG EM63B165TS-6SG EM63B165TS-7SG |
32M x 16 bit Synchronous DRAM (SDRAM)
|
Etron Technology, Inc.
|
HYS72V32200GU-8B |
32M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168
|
SIEMENS A G
|